广义预测控制系统的仿真软件设计与开发

介绍了基于广义预测控制的模型预测控制（MPC）系统仿真软件的开发与实现过程。该软件包含了MAC，IMAC，DMC，DDMC和GPC五种预测控制算法，可以用不同的方法实现对预测控制系统的综合性仿真以及控制器参数的调整。利用该软件可对模型预测控制系统的作用机理做进一步仿真分析，并有助于定性分析各种算法中设计参数对系统性能的影响以及不同算法之间的区别。     

Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As Grown on InP

We have studied properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). A large MCD peak whose intensity is larger than 500 mdeg for (InGaMn)As was observed. This peak intensity was about three times larger than that of typical (GaMn)As films. Relatively high Curie temperature of 83 K of [(In_0.53Ga_0.47)_0.88Mn_0.12]As was observed by Hall measurements. The carrier concentration of [(In_0.53Ga_0.47)_0.88Mn_0.12]As was estimated to be more than 1.0 × 10²¹ cm^–3 by using the Curie–Weiss fitting of the Hall coefficient R _H, indicating that more than 40% of Mn atoms are activated. This means that (InGaMn)As has a higher activation ratio of Mn as acceptors than (GaMn)As.     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

近10年中国润滑脂产量与品种构成的发展

基于对中国27个润滑脂生产厂的调查统计结果，综述了1992～2001年10年间中国润滑脂产量、生产规模、品种结构及包装形式的发展变化情况，展望了今后的发展趋势。     

半导体激光器用铷D2线光电流谱稳频

本文报导了用铷原子７８００Ａ光电流谱来稳定半导体激光器的工作，在光电流谱线的中部发现了有利于稳频的凹陷，将半导体激光器频率锁定在凹陷的中央，估算的频率稳定度为１ＭＨｚ。     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

光催化氧化后四环素的分解率与COD去除率之间关系的探讨

以粉状无机半导体（ＺｎＯ）为催化剂，探讨了水溶液中四环素经光催化氧化分解率和ＣＯＤ去除率之间的关系。实验表明，在本实验中四环素的分解率和ＣＯＤ去除率之间有较好的正相关性。当反庆系统中有足量的活性催化剂和足够的光照时间时，绝大部分四环素将被较彻底地氧化分解成ＣＯ２，这不仅有助于光催化反应机理的研究，助于今后在环保中的实际应用。     

简化源项计算方法

利用程序包STCP估算核电厂在发生严重事故情况下释放到环境的放射性源项需要耗费大量计算机时间和费用。所以,对所有感兴趣的事故情景完成源项程序包的计算实际上是不可能的。为此,发展了一个简化源项计算方法。它的基本思想如下:首先利用STCP计算几个选择的序列,然后根据放射性释放和事故进程的特点处理和分析由STCP计算得到的结果,得出一些特定参数,其它事故序列的源项能够通过这些参数的重新组合得到。     

半导体陶瓷致冷材料的性能与结构

采用新的陶瓷工艺技术,在气氛保护条件下,通过固相烧结反应法制备出温差电多晶材料。对膺三元固溶体化合物 P 型(72%Sb_2Te_3+25%Bi_2Te_3+3%Sb_2Se_3)和 N 型(90%Bi_2Te_3+5%Sb_2Te_3+5%Sb_2Se_3)的掺杂陶瓷样品进行了性能与结构研究。找到了最佳工艺制度。样品性能参数为:N 型:α=186μV/K σ=1250Ω~(-1)·cm~(-1) λ=14.7mW/(cm.K) Z=2.9×10~(-3)/KP 型:α=220μV/K σ=900 Ω~(-1)·cm~(-1) λ=14.0mW/(cm.K) Z=3.1×10~(-3)/K